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2SJ529(L), 2SJ529(S) Silicon P Channel MOS FET REJ03G0879-0300 (Previous ADE-208-654A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Package name DPAK (S) ) 4 4 D 1. Gate 1 2 2. Drain G 3 3. Source 4. Drain 1 2 3 S Rev.3.00 Sep 07, 2005 page 1 of 8 2SJ529(L), 2SJ529(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 10 A D Drain peak current I Note 1 40 A D (pulse) Body to drain diode reverse drain current I 10 A DR Avalanche current I Note 3 10 A AP Avalanche energy E Note 3 8... See More ⇒

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