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2SK1636(L), 2SK1636(S) Silicon N Channel MOS FET REJ03G0961-0200 (Previous ADE-208-1304) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 D 4 1. Gate G 2. Drain 3. Source 4. Drain 1 2 3 1 2 S 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2SK1636(L), 2SK1636(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage V 30 V GSS Drain current ID 15 A Drain peak current I *1 60 A D(pulse) Body to drain diode reverse drain current IDR 15 A Channel dissipation Pch*2 75... See More ⇒

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