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2SK3162 Silicon N Channel MOS FET High Speed Power Switching REJ03G1087-0400 (Previous ADE-208-735C) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 Rev.4.00 Sep 07, 2005 page 1 of 7 2SK3162 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 20 V Drain current ID 20 A Drain peak current ID(pulse)Note1 80 A Body-drain diode reverse drain current IDR 20 A Avalanche current IAP Note3 20 A Avalanche energy EAR Note3 26 mJ Channel dissipation Pch Note2 35 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW ... See More ⇒

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