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2SK3210(L), 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS 20 V Drain current ID 30 A Drain peak current ID (pulse)Note1 120 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAPNote3 30 A Avalanche energy EARNote3 67 mJ Channel dissipation PchNote2 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10ms, duty cycle 1 % 2. Value at Tc = 25 C 3. Value at Tch = 25 C,... See More ⇒

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