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View h5n2507p detailed specification:

Preliminary Datasheet H5N2507P R07DS0877EJ0200 (Previous RJJ03G0646-0100) 250V - 50A - MOS FET Rev.2.00 High Speed Power Switching Sep 12, 2012 Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25 C) Low leakage current High speed switching Low gate charge Built-in fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P ) 4 D 1. Gate 2. Drain G 3. Source 4. Drain 1 2 S 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to Source voltage VDSS 250 V Gate to Source voltage VGSS 30 V Drain current ID 50 A Drain peak current ID (pulse) Note1 200 A Body-Drain diode reverse Drain current IDR 50 A Avalanche current IAP Note3 35 A Channel dissipation Pch Note2 150 W Channel to case thermal impedance ch-c 0.833 C/W Channel temperature... See More ⇒

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