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View r07ds0409ej 2sk3210ls detailed specification:

Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400 (Previous REJ03G0414-0300) Silicon N Channel MOS FET Rev.4.00 High Speed Power Switching May 16, 2011 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 D 4 1. Gate G 2. Drain 3. Source 4. Drain 1 2 3 1 2 S 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS 20 V Drain current ID 30 A Drain peak current ID (pulse)Note1 120 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAPNote3 30 A Avalanche energy EARNote3 67 mJ Channel dissipation PchNote2 100 W Channel tempera... See More ⇒

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