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View r07ds0433ej 2sj496 detailed specification:

Preliminary Datasheet R07DS0433EJ0400 2SJ496 (Previous REJ03G0870-0300) Rev.4.00 Silicon P Channel MOS FET Jun 07, 2011 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate 3 2 1 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 5 A Drain peak current ID (pulse) Note 1 20 A Body to drain diode reverse drain current IDR 5 A Avalanche current IAP Note 3 5 A Avalanche energy EAR Note 3 2.14 mJ Channel dissipation Pch Note 2 0.9 W Channel temperature Tch 150 C Storage temperature... See More ⇒

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