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View stu660 std660 detailed specification:

Green Product STU/D660 SamHop Microelectronics Corp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 620 @VGS=10V TO-252 and TO-251 Package. 80V 3A 800 @VGS=4.5V ESD Protected. D G G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) S (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 20 V TC=25 C 3 A c ID Drain Current-Continuous TC=70 C A 2.4 ac IDM A -Pulsed 8.8 d EAS Single Pulse Avalanche Energy 4 mJ TC=25 C 42 W PD Maximum Power Dissipation TC=70 C 27 W Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 C THERMAL CHARACTERISTICS R 3 JC Thermal Resistance, Junctio... See More ⇒

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