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View irf530a detailed specification:

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 14 ID A Continuous Drain Current (TC=100 ) 9.9 1 IDM Drain Current-Pulsed A 56 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 261 O IAR Avalanche Current 1 14 A O EAR Repetitive Avalanche Energy 1 5.5 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O Total Power Dissipation (TC=25 ) 55 W PD Linear Derating Fa... See More ⇒

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