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View irfr130a detailed specification:

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.092 2 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 13 ID A Continuous Drain Current (TC=100 ) 8.2 1 IDM Drain Current-Pulsed 52 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 225 mJ O 1 IAR Avalanche Current 13 A O 1 EAR Repetitive Avalanche Energy 4.1 mJ O dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O * Total Power Dissipation (TA=25 ) 2.5 W PD Total Power Dissipation (TC=25 ) 41 ... See More ⇒

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