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View ssw1n50a detailed specification:

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 4.046 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 Continuous Drain Current (TC=25 ) 1.5 ID A Continuous Drain Current (TC=100 ) 0.97 1 IDM Drain Current-Pulsed O 5 A VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 113 mJ O IAR Avalanche Current 1 1.5 A O EAR Repetitive Avalanche Energy 1 3.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt O 3.5 V/ns * Total Power Dissipation (TA=25 ) 3.1 W PD Total Power Dissipation (TC=25 ) ... See More ⇒

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