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Ordering number ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit mm Small Cob(typical Cob=2.0pF). 2079D Full-isolation package. [2SC4633LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Base 2 Collector 3 Emitter Specifications 2.55 2.55 SANYO TO-220FI(LS) Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 1200 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 30 mA Collector Current (Pulse) ICP 100 mA Collector Dissipation PC 2 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C El... See More ⇒

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