All Transistors. Equivalents Search

View 2sc4650 detailed specification:

Ordering number EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent high 2064 frequency characteristic [2SA1787/2SC4650] Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes. E Emitter C Collector B Base ( ) 2SA1786 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( )200 V Collector-to-Emitter Voltage VCEO ( )200 V Emitter-to-Base Voltage VEBO ( )5 V Collector Current IC ( )100 mA Colletor Current (Pulse) ICP ( )200 mA Collector Dissipation PC 1.0 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Character... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sc4650.pdf Design, MOSFET, Power

 2sc4650.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4650.pdf Database, Innovation, IC, Electricity