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View 2sd1235 detailed specification:

Ordering number 1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2010C [2SB919/2SD1235] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current capacity. JEDEC TO-220AB 1 Base ( ) 2SB919 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( )60 V Collector-to-Emitter Voltage VCEO ( )30 V Emitter-to-Base Voltage VEBO ( )6 V Collector Current IC ( )8 A Collector Current (Pulse) ICP ( )15 A Collector Dissipation PC 1.75 W Tc=25 C 30 W C Junction Temperature Tj 150 Storage Temperature Tstg 5... See More ⇒

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