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Ordering number ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ289] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS 15 V Drain Current (DC) ID --500 mA Drain Current (Pulse) IDP PW 10 s, duty cycle 1% --1 A Mounted on a ceramic board (250mm2 0.8mm) 1.3 W Allowable Power Dissipation PD Tc=25 C 3.5 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdow... See More ⇒

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