View 2sj502 datasheet:

Ordering number ENN6178A P-Channel Silicon MOSFET 2SJ502 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2091A 4V drive. [2SJ502] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 0.5 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 2.0 A Allowable Power Dissipation PD 0.25 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID= 1mA, VGS=0 30 V Zero-Gate Voltage Drai... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 2sj502.pdf Design, MOSFET, Power

 2sj502.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj502.pdf Database, Innovation, IC, Electricity