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View sml40h28 detailed specification:

sml40h28sml40h28

SML40H28 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 400V ID(cont) 28A RDS(on) 0.140 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Leakage Typ. TO 258 Hermetic Package Pin 1 Drain Pin 2 Source Pin 3 Gate D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. S ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) Drain Source Voltage 400 V VDSS Continuous Drain C... See More ⇒

 

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