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View hfd630 hfu630 detailed specification:

Dec 2012 BVDSS = 200 V RDS(on) typ HFD630 / HFU630 ID = 7.2 A 200V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD630 HFU630 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) GS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 200 V ID Drain Current Continuous (TC = 25 7.2 A Drain Current Continuous (TC = 100 4.6 A IDM Drain Current Pulsed (Note 1) 28.8 A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) 7.2 A EAR Repetitive ... See More ⇒

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