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View st2n7000 detailed specification:

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1 M ) VDGR 60 V Gate-source Voltage Continuous VGS 20 V VGSM 40 V Non-repetitive ( tp 50 s) Drain Current Continuous ID 200 mA IDM 500 mA Pulsed 350 mW Total Power Dissipation PD O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited Dated 26/08/2005 SEMTECH ST 2N7000 O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS 60 - V at VGS = 0, ID = 10 A Zero Gate Voltage Drain Current IDSS - 1 A at VDS = 48 V,... See More ⇒

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