View buz101 detailed specification:
BUZ 101 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175 C operating temperature also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 50 V 29 A 0.06 TO-220 AB C67078-S1350-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 31 C 29 Pulsed drain current IDpuls TC = 25 C 116 Avalanche energy, single pulse EAS mJ ID = 29 A, VDD = 25 V, RGS = 25 L = 83 H, Tj = 25 C 70 Reverse diode dv/dt dv/dt kV/ s IS = 29 A, VDS = 40 V, diF/dt = 200 A/ s Tjmax = 175 C 6 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 100 Operating temperature Tj -55 ... + 175 C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC 1.5 K/W Thermal resistance, ch... See More ⇒
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buz101.pdf Design, MOSFET, Power
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