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View stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2 detailed specification:

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 Extremely low gate charge 2 1 Lower RDS(on) x area vs previous generation 3 2 IPAK 1 Low gate input resistance TO-220 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram , TAB Applications Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yie... See More ⇒

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