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STD7NM64N N-channel 640 V, 5 A, 0.88 typ., MDmesh II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD7NM64N 640 V 1.05 5 A TAB 100% avalanche tested 3 Low input capacitance and gate charge 1 Low gate input resistance DPAK Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of D(2, TAB) MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high G(1) efficiency converters. S(3) AM01475v1 Table 1. Device summary Order code Marking Packages Packaging STD7NM64N 7NM64N DPAK Tape and r... See More ⇒

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