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View 2sc3709a detailed specification:

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit mm Low collector saturation voltage V = 0.4 V (max) CE (sat) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base current IB 2 A Collector power dissipation PC 30 W (Tc = 25 C) JEDEC Junction temperature Tj 150 C JEITA Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1A Weight 1.7 g (typ.) Electrical Characteristics (Tc = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 10 A Emitter cut-off current IEBO VEB = ... See More ⇒

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