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View 2sc4915 detailed specification:

2sc49152sc4915

2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2.3dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C JEDEC Storage temperature range Tstg -55 125 C JEITA TOSHIBA 2-2H1A Weight 2.4 mg (typ.) Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 A 0.1 A Emitter cut-off current IEBO VEB = 4 V... See More ⇒

 

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