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2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit mm Complementary to 2SB905 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Base current IB 1.0 A Ta = 25 C 1.0 Collector power PC W dissipation Tc = 25 C 10 Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEDEC JEITA TOSHIBA 2-7B1A Weight 0.36 g (typ.) JEDEC JEITA TOSHIBA 2-7J1A Weight 0.36 g (typ.) 1 2002-07-23 2SD1220 Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 150 V, IE = 0 1.0 A Emitter cut-off current IEBO VEB = 6 V, IC = 0... See More ⇒

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