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View 2sj103 detailed specification:

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current Unit mm and Impedance Converter Applications High breakdown voltage VGDS = 50 V High input impedance I = 1.0 nA (max) (V = 30 V) GSS GS Low R R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK246 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS 50 V Gate current IG -10 mA Drain power dissipation PD 300 mW Junction temperature Tj 125 C Storage temperature range Tstg -55 125 C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1C Weight 0.21 g (typ.) Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = 30 V, VDS = 0 1.0 nA Gate-drain breakdown volta... See More ⇒

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