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2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current Unit mm and Impedance Converter Applications High input impedance IGSS = 1.0 nA (max) (V = 25 V) GS Low R R = 40 (typ.) DS (ON) DS (ON) Small package Complementary to 2SK366 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS 25 V Gate current IG -10 mA Drain power dissipation PD 200 mW Junction temperature Tj 125 C Storage temperature range Tstg -55 125 C JEDEC JEITA TOSHIBA 2-4E1C Weight 0.13 g (typ.) Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = 25 V, VDS = 0 1.0 nA Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = 100 A 25 ... See More ⇒

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