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View 2sj168 detailed specification:

2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = -50 mA D Low on resistance R = 1.3 (typ.) @ I = -50 mA DS (ON) D Enhancement-mode Complementary to 2SK1062 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS 20 V DC ID -200 JEDEC Drain current mA Pulse IDP -800 JEITA SC-59 Drain power dissipation (Ta = 25 C) PD 200 mW TOSHIBA 2-3F1F Channel temperature Tch 150 C Weight 0.012 g (typ.) Storage temperature range Tstg -55 150 C Note This transistor is the electrostatic sensitive device. Please handle with ... See More ⇒

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