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View 2sj201 detailed specification:

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit mm High breakdown voltage VDSS = -200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V JEDEC Gate-source voltage VGSS 20 V JEITA Drain current (Note 1) ID -12 A Drain power dissipation (Tc = 25 C) PD 150 W TOSHIBA 2-21F1B Channel temperature Tch 150 C Weight 9.75 g (typ.) Storage temperature range Tstg -55 to 150 C Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating ... See More ⇒

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