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View 2sj305 detailed specification:

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit mm Analog Applications High input impedance Low gate threshold voltage. V = -0.5 -1.5 V th Excellent switching times. t = 0.06 s (typ.) on t = 0.15 s (typ.) off Low drain-source ON resistance R = 2.4 (typ.) DS (ON) Small package. Complementary to 2SK2009 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS -30 V Gate-source voltage VGSS 20 V JEDEC TO-236MOD DC drain current ID -200 mA JEITA SC-59 Drain power dissipation PD 200 mW TOSHIBA 2-3F1F Channel temperature Tch 150 C Weight 0.012 g (typ.) Storage temperature range Tstg -55 150 C Note This transistor is electrostatic sensitive device. Please handle with caution. Marking Equivalent C... See More ⇒

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