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View 2sj313 detailed specification:

2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 0.7 S (typ.) fs Complementary to 2SK2013 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Drain current (Note 1) ID -1 A Power dissipation (Tc = 25 C) PD 25 W Channel temperature Tch 150 C Storage temperature range Tstg -55 150 C JEDEC Marking JEITA SC-67 TOSHIBA 2-10R1B Weight 1.9 g (typ.) Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VDS = 0, VGS = 20 V 100 nA Drain-source breakdown voltage V (BR) DSS ID = -10 mA, VGS = 0 -180 V Gate-source cut-off vol... See More ⇒

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