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View 2sj342 detailed specification:

2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit mm Analog Switch Applications Low threshold voltage Vth = -0.8 -2.5 V High speed Enhancement-mode Small package Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta = = 25 C) = = JEDEC Characteristics Symbol Rating Unit JEITA TOSHIBA 2-4E1E Drain-source voltage VDS -50 V Gate-source voltage VGSS -7 V Weight 0.13 g (typ.) DC drain current ID -50 mA Drain power dissipation PD 300 mW Channel temperature Tch 150 C Storage temperature range Tstg -55 150 C Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gateate leakage current IGSS VGS = -7 V, VDS = 0 -1 A Drain-source breakdown voltage V (BR) DSS ID = -100 A, VGS = 0 ... See More ⇒

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