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2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 33 m (typ.) High forward transfer admittance Yfs = 20 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k ) VDGR -60 V Gate-source voltage VGSS 20 V DC (Note 1) ID -20 A Drain current Pulse (Note 1) IDP -80 A JEDEC Drain power dissipation (Tc = 25 C) PD 45 W JEITA SC-67 Single pulse avalanche energy EAS 800 mJ (Note 2) TOSHIBA 2-10R1B Avalanche current IAR -20 A Weight 1.9 g (typ.) Repetitive a... See More ⇒

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