All Transistors. Equivalents Search

View 2sj360 detailed specification:

2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ360 High Speed, High current Switching Applications Unit mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 0.55 (typ.) High forward transfer admittance Yfs = 0.9 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k ) VDGR -60 V Gate-source voltage VGSS 20 V DC (Note 1) ID -1 A Drain current Pulse (Note 1) IDP -4 A Drain power dissipation PD 0.5 W JEDEC Drain power dissipation (Note 2) PD 1.5 W JEITA SC-62 Channel temperature Tch 150 C TOSHIBA 2-5K1... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sj360.pdf Design, MOSFET, Power

 2sj360.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj360.pdf Database, Innovation, IC, Electricity