All Transistors. Equivalents Search

View 2sj412 detailed specification:

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 0.15 (typ.) High forward transfer admittance Yfs = 7.7 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -100 V) Enhancement mode Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -100 V Drain-gate voltage (RGS = 20 k ) VDGR -100 V Gate-source voltage VGSS 20 V DC (Note 1) ID -16 JEDEC Drain current A Pulse (Note 1) IDP -64 JEITA Drain power dissipation (Tc = 25 C) PD 60 W TOSHIBA 2-10S1B Single pulse avalanche energy EAS 292 mJ Weight 1.5 g (typ.) (Note 2) Avalanche current IAR -16 A R... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sj412.pdf Design, MOSFET, Power

 2sj412.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj412.pdf Database, Innovation, IC, Electricity