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2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power PO = 7.0 W (min) Gain GP = 11.4dB (min) Drain efficiency D = 60% (min) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gain-source voltage VGSS 10 V Drain current ID 3 A Power dissipation PD (Note 1) 20 W JEDEC Channel temperature Tch 150 C JEITA Storage temperature range Tstg -45 to 150 C TO... See More ⇒

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