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2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK4013 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 k ) VDGR 800 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6 1 Gate Drain current A 2 Drain Pulse (Note 1) IDP 18 3 Source Drain power dissipation (Tc = 25 C) PD 45 W Single pulse avalanche energy JEDEC EAR 317 mJ (Note 2) JEITA SC-67 Avalanche current IAR 6 A TOSHIBA 2-10U1B Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight... See More ⇒

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