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View p0460ed detailed specification:

P0460ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulsed Drain Current1 2 IAS 4 Avalanche Current3 EAS 80 mJ Avalanche Energy3 TC = 25 C 62.5 PD Power Dissipation W TC = 100 C 25 Tj, Tstg Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 2 C / W Junction-to-Ambient RqJA 62.5 1 Pulse width limited by maximum junction temperature. 2 Limited only by maximum temperature allowed. 3 VDD = 50V , L = 10mH ,starting TJ = 25 C... See More ⇒

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