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PV551BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -9 ID Continuous Drain Current TA = 70 C -7 A IDM -40 Pulsed Drain Current1 IAS Avalanche Current -23.5 EAS Avalanche Energy L=0.1mH 27 mJ TA = 25 C 3 PD W Power Dissipation3 TA = 70 C 2 TJ, TSTG Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS RqJA t 10s 40 Junction-to-Ambient2 Steady-State RqJA 72 C / W Junction-to-Ambient2 Junction-to-Case Steady-State RqJC 30 1 Pulse width limited by maximum junction temperature. 2 The value of RqJA is measured ... See More ⇒

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