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View pz2103nv detailed specification:

PZ2103NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 21m @VGS = 10V 30V 8A N 34m @VGS = -10V -30V -6A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 8 TA = 25 C P -6 ID Continuous Drain Current N 6 TA = 70 C P -5 A N 36 IDM Pulsed Drain Current1 P -27 N 20 IAS Avalanche Current P -20 N 21 EAS Avalanche Energy L = 0.1mH mJ P 21 N 2 TA = 25 C P 2 PD Power Dissipation W N 1.3 TA = 70 C P 1.3 TJ, TSTG Junction & Storage Temperature Range -55 to 150 C TL 275 Lead Temperature (1/16" from case for 10 sec .) Ver 1.0 1 2012/4/16 PZ2103NV N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL... See More ⇒

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