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PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 6 @VGS = 4V 110mA SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 110 ID Continuous Drain Current1 TA = 100 C 70 mA IDM 400 Pulsed Drain Current2 IAS Avalanche Current 300 EAS Avalanche Energy L = 0.1mH 0.5 mJ TA = 25 C 150 PD Power Dissipation mW TA = 100 C 60 TJ, TSTG Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RqJA 833 C / W 1 Limited by maximum junction temperature. 2 Limited by package. Ver 1.0 1 2012/4/12 PZP003BYB N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Not... See More ⇒

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