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IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 P-Channel Fully Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with S I2PAK (TO-262) D2PAK (TO-263) the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely effic... See More ⇒

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 irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf Design, MOSFET, Power

 irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf RoHS Compliant, Service, Triacs, Semiconductor

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