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IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.14 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 34 COMPLIANT P-Channel Qgs (nC) 9.9 175 C Operating Temperature Qgd (nC) 16 Dynamic dV/dt Rating Configuration Single Low Thermal Resistance Lead (Pb)-free Available S TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation D capability and a low t... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 irfi9z34g sihfi9z34g.pdf Design, MOSFET, Power

 irfi9z34g sihfi9z34g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfi9z34g sihfi9z34g.pdf Database, Innovation, IC, Electricity

 

 

 


     

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