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View irfibe30g sihfibe30g detailed specification:

IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.6 Dynamic dV/dt Rating Qgd (nC) 45 Low Thermal Resistance Configuration Single Lead (Pb)-free Available D TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. S The moulding compound used provides a high isolation S D G capability and a low thermal resistance between the tab and N-Chan... See More ⇒

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