All Transistors. Equivalents Search

View si1901dl detailed specification:

Si1901DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 3.8 @ VGS = 4.5 V 180 20 20 5.0 @ VGS = 2.5 V 100 SOT-363 SC-70 (6-Leads) Marking Code S1 1 6 D1 QD XX G1 2 5 G2 Lot Traceability and Date Code 4 D2 3 S2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VGS "8 TA = 25_C 180 Continuous Drain Current (TJ = 150_C)a ID Continuous Drain Current (TJ = 150 C)a ID mA A TA = 70_C 140 Pulsed Drain Current IDM 500 TA = 25_C 0.20 Maximum Power Dissipationa PD W Maximum Power Dissipationa PD W TA = 70_C 0.13 Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Am... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 si1901dl.pdf Design, MOSFET, Power

 si1901dl.pdf RoHS Compliant, Service, Triacs, Semiconductor

 si1901dl.pdf Database, Innovation, IC, Electricity