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SiZ710DT Vishay Siliconix N-Channel 20 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs 0.0068 at VGS = 10 V 16a Channel-1 20 6.9 nC 100 % Rg and UIS Tested 0.0090 at VGS = 4.5 V 16a Compliant to RoHS Directive 2002/95/EC 0.0033 at VGS = 10 V 35a APPLICATIONS Channel-2 20 18.2 nC 0.0043 at VGS = 4.5 V 35a Notebook System Power POL PowerPAIR 6 x 3.7 Synchronous Buck Converter Pin 1 D1 G1 3.73 mm 1 D1 2 D1 D1 3 G1 G2 S1/D2 N-Channel 1 S1/D2 MOSFET S2 (Pin 7) 6 6 mm S2 5 G2 4 N-Channel 2 Ordering Information MOSFET S2 SiZ710DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Unit VDS 20 Drain-Source... See More ⇒

 

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 siz710dt.pdf Design, MOSFET, Power

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