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View 2n7002k detailed specification:

2N7002K N-Channel Enhancement 3 DRAIN Mode Power MOSFET 3 1 P b Lead(Pb)-Free 1 GATE * 2 * Gate Pretection Diode SOURCE 2 SOT-23 Features * Low on-resistance. * Fast switching speed. * Low-voltage drive. * Easily designed drive circuits. * Easy to parallel. * Pb-Free package is available. * Esd Protected 2000V Maximum Ratings(T = 25 Unless Otherwise Specified) A Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS 20 V Continuous ID 115 mA Drain current 1 * Pulsed IDP 0.8 A Continuous IDR 115 mA Drain reverse current 1 * Pulsed IDRP 0.8 A 2 * PD 225 mW Total power dissipation Channel temperature Tch 150 C Storage temperature + Tstg -55 150 C 1. Pw 10 s, Duty cycle 1%. 2. When mounted on a 1 0.75 0.062 inch glass epoxy board. Device Marking 2N7002K = RK WEITRON 1/5 02-Mar-10 h... See More ⇒

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