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MUN5111 Series COLLECTOR Bias Resistor Transistor 3 3 PNP Silicon BASE R1 1 1 R2 2 2 SOT-323(SC-70) EMITTER ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 50 CEO Vdc Vdc Collector-Base Voltage VCBO 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Max Unit Characteristics Symbol Total Device Dissipation FR-5 Board PD 202 (1) mW (1)TA=25 C 310 (2) Derate above 25 C (1) 1.6 mW/ C 2.5 (2) R JA Thermal Resistance, Junction to Ambient (1) 618 C/W 403 TJ,Tstg Junction and Storage, Temperature Range -55 to +150 C 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 1.0 inch Pad Device Marking and Resistor Values Device Marking R1(K) R2(K) Device Marking R1(K) R2(K) 10 MUN5111 6A 10 MUN5131 6H 2.2 2.2 MUN5112 6B 22 22 4.7 MUN5132 6J 4.7 4.7 MUN5113 47 47 MUN5133 47 6C 6K 10 ... See More ⇒

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