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View 2sd1650 detailed specification:

2SD1650 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PML SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base) VCEO - 600 V Collector current (DC) IC - 3.5 A Collector current peak value ICM - 7.0 A Total power dissipation Tmb 25 Ptot - 50 W Collector-emitter saturation voltage IC = 2.0A; IB = 0.4A VCEsat - 1.5 V Collector saturation current f = 16KHz - A Icsat Diode forward voltage IF = 2.0A 2.0 V VF Fall time IC=2A,IB1=-IB2=0.4A,VCC=140V 1.0 s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V -... See More ⇒

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