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Silicon N-Channel Power MOSFET R CS65N25 AKR General Description VDSS 250 V CS65N25 AKR, the silicon N-channel Enhanced ID 65 A PD (TC=25 ) 420 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 42 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-247, which accords with the RoHS standard.. Features Fast Switching Low ON Resistance(Rdson 50m ) Low Gate Charge (Typical Data 90.1nC) Low Reverse transfer capacitances(Typical 44 pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of electron ballast and adaptor. Absolute TJ= 25 unless otherwise specified Symbol

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 cs65n25akr.pdf Проектирование, MOSFET, Мощность

 cs65n25akr.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cs65n25akr.pdf База данных, Инновации, ИМС, Транзисторы